1000 write cycles is plenty for program flash, but less
so for parameter flash.
Is it known whether node parameters (written with ATWR) are
in program flash or Simulated EEPROM? One supposes that
the latter would have a much larger write-cycle capacity,
but the "sparingly" warning appears in the ATWR description.
This is significant since (as near as I can tell) the Dia
XBee configurator does an ATWR every time Dia starts up.